Plasma‐Enhanced Chemical Vapor Deposition of Fluorocarbon Films with High Thermal Resistance and Low Dielectric Constants

Fluorocarbon films with low dielectric constants and high thermal resistance have been developed by plasma-enhanced chemical vapor deposition (PECVD) using gas mixtures of fluorocarbons (e.g., C 4 F 8 ), hydrocarbons (e.g., C 2 H 2 ), and/or hydrogen. A conventional parallel plate electrode PECVD system was used as the reactor. We report dielectric constants lower than 2.4 with these fluorinated films. The thermal decomposition temperature was higher than 400°C and the glass transition temperature (Tg) was also higher than 450°C. This enables the use of organic films with very low dielectric constant in actual devices.