Electrical characterization of ALD Al2O3 - HfO2 and PECVD Al2O3 passivation layers for p-type CZ-Silicon PERC solar cells

Authors :: J. Poortmans
Gaudenzio Meneghesso
Joachim John
Emanuele Cornagliotti
H. Goverde
Bart Vermang
A. Morato
Source :: 2012 38th IEEE Photovoltaic Specialists Conference.
Publication Year :: 2012
Publisher :: IEEE, 2012.
Abstract: This work characterizes p-type Silicon surface passivation using a high-k material (Al 2 O 3 or HfO 2 ) combining capacitance voltage (CV) and lifetime measurements.

Subjects :: Materials science
Passivation
Silicon
business.industry
Annealing (metallurgy)
chemistry.chemical_element
Capacitance voltage
Cz silicon
Atomic layer deposition
chemistry
Plasma-enhanced chemical vapor deposition
Surface roughness
Optoelectronics
business

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