In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring Ion = 828 µA/µm, Ion/Ioff ∼ 1×105, DIBL= 16–54 mV/V, and 1.4X external strain enhancement

MLA

I-Hsieh Wong, et al. “In-Situ Doped and Tensily Stained Ge Junctionless Gate-All-around NFETs on SOI Featuring Ion = 828 ΜA/Μm, Ion/Ioff ∼ 1×105, DIBL= 16–54 MV/V, and 1.4X External Strain Enhancement.” 2014 IEEE International Electron Devices Meeting, Dec. 2014. EBSCOhost, https://doi.org/10.1109/iedm.2014.7047019.

APA

I-Hsieh Wong, Chee-Wee Liu, Tai-Cheng Shieh, Yu-Sheng Chen, Shih-Hsien Huang, Tzu-Yao Lin, Huang-Siang Lan, Yen-Ting Chen, & Wen-Hsien Tu. (2014). In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring Ion = 828 µA/µm, Ion/Ioff ∼ 1×105, DIBL= 16–54 mV/V, and 1.4X external strain enhancement. 2014 IEEE International Electron Devices Meeting. https://doi.org/10.1109/iedm.2014.7047019

Chicago

I-Hsieh Wong, Chee-Wee Liu, Tai-Cheng Shieh, Yu-Sheng Chen, Shih-Hsien Huang, Tzu-Yao Lin, Huang-Siang Lan, Yen-Ting Chen, and Wen-Hsien Tu. 2014. “In-Situ Doped and Tensily Stained Ge Junctionless Gate-All-around NFETs on SOI Featuring Ion = 828 ΜA/Μm, Ion/Ioff ∼ 1×105, DIBL= 16–54 MV/V, and 1.4X External Strain Enhancement.” 2014 IEEE International Electron Devices Meeting, December. doi:10.1109/iedm.2014.7047019.