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Examination of various characteristics for sputtered tantalum oxide-nitride thin films deposited at various oxygen flowrates
- Source :
- Integrated Ferroelectrics. 185:41-46
- Publication Year :
- 2017
- Publisher :
- Informa UK Limited, 2017.
-
Abstract
- Tantalum oxynitride thin films were prepared by reactive sputtering. The argon and nitrogen flow rate were kept stable whereas oxygen flow rate was incremented periodically. The effect of oxygen fl...
- Subjects :
- Materials science
genetic structures
Tantalum
chemistry.chemical_element
02 engineering and technology
Nitride
01 natural sciences
Oxygen
Sputtering
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
Thin film
010302 applied physics
Argon
021001 nanoscience & nanotechnology
Condensed Matter Physics
eye diseases
Electronic, Optical and Magnetic Materials
chemistry
Chemical engineering
Control and Systems Engineering
Ceramics and Composites
sense organs
Tantalum oxide
Wetting
0210 nano-technology
Subjects
Details
- ISSN :
- 16078489 and 10584587
- Volume :
- 185
- Database :
- OpenAIRE
- Journal :
- Integrated Ferroelectrics
- Accession number :
- edsair.doi...........a909d28ee66a37dcddf3770568468244
- Full Text :
- https://doi.org/10.1080/10584587.2017.1370286