Growth of BaIn 2 S 4 layers through the hot-wall-epitaxy method and their electric/optical properties

The epitaxial growth of photoconductive BaIn 2 S 4 layers was first achieved through the hot-wall-epitaxy method. In spite of an existing large lattice mismatch between the substrate and layer, BaIn 2 S 4 layers were epitaxially grown along the (440) direction onto a GaAs (100) substrate. Thus, the lattice mismatch was well interpreted through a coincidence site lattice model. From the relationship between the reciprocal temperature and the carrier concentration, the three donor levels were found to be 1.3, 20.2, and 78.3 meV below the conduction band. These donor levels are caused by the native defects originating from slight stoichiometric deviations. From the temperature dependence of the Hall mobility, two specific scatterings were observed. One, at high temperatures ranging over 180 K, is mainly due to the acoustic phonon mode of lattice vibrations through a deformation potential. The other, at low temperatures ranging below 100 K, is ascribed to the dislocation scattering. From the photocurrent (PC) measurement, three PC peaks due to band-to-band transitions were observed. Also, based on the analysis of optical absorption and PC spectra, the optical band gap has been compared and matched well with E g ( T )= E g (0)−3.95×10 −3 T 2 /( T +499), where E g (0) is estimated to be 3.0597, 3.2301, and 3.2606 eV for the transitions corresponding to the valence band states of peaks A, B and C, respectively.