Investigation of charge-trap memories with AlN based band engineered storage layers

This paper presents an in-depth investigation of the electrical properties of charge trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si 3 N 4 as storage layer. An engineered charge trapping layer is also proposed, made by an AlN/Si 3 N 4 double layer, which shows reduced program/erase voltages, combined with 106 excellent endurance and good retention (ΔV T ≫5V after 10 years at 125°C).