Optimizing the growth procedures for CdSe crystal by thermal analysis techniques

The growth procedures for CdSe crystal have been optimized by thermal analysis techniques and a high-quality single crystal with large size has been grown. CdSe crystal was determined to exhibit smooth interface growth based on Jackson’s model; the growth rate equation in the vapor phase method was built and the thermodynamic parameters (activation energy and rate constant pre-factor) in the growth equation were obtained by thermogravimetic analysis of the sublimation process of the crystal. The growth rate distribution curves under various temperature differences between the source and growth region of growth ampoule were obtained, and then the growth procedures such as temperature difference, growth temperature and pulling rate were optimized. Using the optimizing vapor phase growth technique, a single crystal with 26 mm diameter and 45 mm length has been grown, and it was characterized by X-ray diffraction, scanning electron microscopy, energy dispersive analyzer of X-ray and IR spectrophotometers. The results show that the as-grown CdSe ingot has prefect crystallinity, good homogeneity and high transmittance, which showed that the vapor phase growth technique optimized by thermal analysis was a promising growth method for high-quality CdSe single crystal.