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Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

Authors :
A. Endoh
I. Watanabe
A. Kasamatsu
T. Takahashi
S. Shiba
Y. Nakasha
T. Iwai
T. Mimura
Source :
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Publication Year :
2015
Publisher :
The Japan Society of Applied Physics, 2015.

Subjects

Subjects :
Materials science
business.industry
Optoelectronics
High-electron-mobility transistor
business

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........a8ba393add756428904f3c2c08bc3606

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