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Direct observation of interface effects of thin AlAs(100) layers buried in GaAs

Authors :
Thorvald Andersson
S. Mankefors
Joseph Nordgren
Akane Agui
Conny Såthe
Janusz Kanski
K. Karlsson
Junji Guo
Per-Olof Nilsson
Source :
Applied Surface Science. 166:309-312
Publication Year :
2000
Publisher :
Elsevier BV, 2000.

Abstract

A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. ...

Subjects

Subjects :
Interface (Java)
business.industry
Chemistry
Semiconductor materials
Direct observation
General Physics and Astronomy
Synchrotron radiation
Particle accelerator
Surfaces and Interfaces
General Chemistry
Electronic structure
Condensed Matter Physics
Spectral line
Surfaces, Coatings and Films
law.invention
law
Optoelectronics
Atomic physics
business

Details

ISSN :
01694332
Volume :
166
Database :
OpenAIRE
Journal :
Applied Surface Science
Accession number :
edsair.doi...........a865d19ca4b2fc0aa537e72a71dc3247
Full Text :
https://doi.org/10.1016/s0169-4332(00)00468-2
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