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Performance of p+layer formed by B diffusion using boron paper
- Source :
- Materials Research Express. 5:035902
- Publication Year :
- 2018
- Publisher :
- IOP Publishing, 2018.
-
Abstract
- This paper presents a novel boron diffusion process using boron paper as the boron source to form a p+ layer. It was found that sheet resistance was invariable with changing the distance between boron paper and Si wafers, and diffusion uniformity was the best at a distance of 0.3 cm. Sheet resistance (Rs) decreased with increasing diffusion temperature, showing a value of 6.9 ?/ at 1050 ?C with a high diffusion uniformity of 99.173%. The junction depth increased from 195 nm to 517 nm with diffusion temperature raised from 900 ?C to 1050 ?C. The influence of diffusion time on the performance of B diffusion from boron paper was similar with that of temperature.
- Subjects :
- 010302 applied physics
Materials science
Polymers and Plastics
Silicon
Metals and Alloys
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Semimetal
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Ion
Biomaterials
chemistry
0103 physical sciences
Wafer
Diffusion (business)
0210 nano-technology
Boron
Layer (electronics)
Sheet resistance
Subjects
Details
- ISSN :
- 20531591
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- Materials Research Express
- Accession number :
- edsair.doi...........a83fedc5e5d4324e20147ca9906e9f41