Hybrid Gate Dielectric of MoS 2 Transistors for Enhanced Photo‐Electronic Stability

Authors :: Yang-Kyu Choi
Woonggi Hong
Gwang Hyuk Shin
Dong Sik Oh
Geon-Beom Lee
Hamin Park
Sung-Yool Choi
Juyeon Kang
Sung Gap Im
Source :: Advanced Materials Interfaces. 8:2100599
Publication Year :: 2021
Publisher :: Wiley, 2021.

Subjects :: Interface engineering
Materials science
business.industry
Mechanical Engineering
Infrasound
Gate dielectric
Transistor
Hexagonal boron nitride
law.invention
Mechanics of Materials
Thin-film transistor
law
Optoelectronics
Field-effect transistor
business
Deposition (chemistry)

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