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Amorphous-silicon distributed-threshold voltage transistors with self-aligned poly-silicon sources and drains
- Source :
- IEEE Transactions on Electron Devices. 41:1614-1617
- Publication Year :
- 1994
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1994.
-
Abstract
- A microstructure has been introduced into the channel of amorphous-silicon thin-film transistors with poly-silicon sources and drains. A slant-photolithography method was introduced for fabricating this device without additional photomasks. The off-characteristics have been improved without sacrificing originally good on-characteristics. Temperature dependence is also discussed for the transistor characteristics. >
- Subjects :
- Amorphous silicon
Materials science
Silicon
business.industry
Transistor
chemistry.chemical_element
Microstructure
Electronic, Optical and Magnetic Materials
law.invention
Threshold voltage
chemistry.chemical_compound
chemistry
law
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
Photomask
business
Communication channel
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........a7c80d1b22b3a8e80067195f38a83918