Back to Search
Start Over
Epitaxial Formation of SiC on (100) Diamond
- Source :
- ACS Applied Electronic Materials. 2:2003-2009
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice mismatch that exceeds 20%. High-resolution transmission electron mi...
- Subjects :
- Materials science
business.industry
Nucleation
Wide-bandgap semiconductor
Diamond
Electron
Plasma
engineering.material
Epitaxy
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Materials Chemistry
Electrochemistry
engineering
Silicon carbide
Optoelectronics
business
Microwave
Subjects
Details
- ISSN :
- 26376113
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- ACS Applied Electronic Materials
- Accession number :
- edsair.doi...........a7123800680088890d263d35f740a9a9