Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study

Authors :: Xiao Sun
Valery V. Afanas'ev
Hsing-Yi Chou
Clement Merckling
Andre Stesmans
Source :: Microelectronic Engineering. 88:1050-1053
Publication Year :: 2011
Publisher :: Elsevier BV, 2011.
Abstract: From electron internal photoemission and photoconductivity measurements at the (100)GaSb/Al"2O"3 interface, the top of the GaSb valence band is found to be 3.05+/-0.10eV below the bottom of the Al"2O"3 conduction band. This interface band alignment corresponds to conduction and valence band offsets of 2.3+/-0.10eV and 3.05+/-0.15eV, respectively, indicating that the valence band in GaSb lies energetically well above the valence band of In"xGa"1"-"xAs (0=

Subjects :: X-ray absorption spectroscopy
Condensed matter physics
Chemistry
Band gap
Photoconductivity
Electron
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Semimetal
Band offset
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Direct and indirect band gaps
Electrical and Electronic Engineering
Quasi Fermi level

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