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The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology
- Source :
- Technical Physics Letters. 46:1257-1262
- Publication Year :
- 2020
- Publisher :
- Pleiades Publishing Ltd, 2020.
-
Abstract
- An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained by wafer fusion of heterostructures grown by molecular beam epitaxy and provide single-mode lasing at a BTJ diameter of up to 8 μm. A decrease in the BTJ size leads to a sharp increase in the threshold current, the output optical power, and the resonance frequency at the lasing threshold. Stable single-mode lasing takes place due to the smoothed boundary of the buried surface relief, which induces a gradual change in the profile of the effective refractive index in the lateral direction with the effective current confinement retained. This makes it possible to reduce significantly the transverse optical confinement factor for the higher-order modes even at a large BTJ size. However, at a small BTJ size, it leads to the formation of a saturable absorber in unpumped parts of the active region.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Physics::Optics
Saturable absorption
Optical power
02 engineering and technology
021001 nanoscience & nanotechnology
Laser
01 natural sciences
law.invention
Vertical-cavity surface-emitting laser
Tunnel junction
law
0103 physical sciences
Optoelectronics
Wafer
0210 nano-technology
business
Lasing threshold
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10906533 and 10637850
- Volume :
- 46
- Database :
- OpenAIRE
- Journal :
- Technical Physics Letters
- Accession number :
- edsair.doi...........a62c9ad38d363aff5e9005d2930f6cf0