Influence of cerium doping on the dielectric relaxation of Sr0.75Ba0.25Nb2O6 single crystal grown by the double crucible Stepanov technique

The effect of Ce doping on the dielectric relaxation in Sr 0.75 Ba 0.25 Nb 2 O 6 single crystal grown by double crucible Stepanov technique has been investigated. It has been observed that the incorporation of Ce ion in the lattice reduces the dielectric maxima. It further increases the degree of diffusiveness and lowers the temperature of dielectric maxima as a result of the introduction of additional random field via created point defects. Both the undoped and Ce doped crystals undergo a non-debye type relaxation. Vogel–Fulcher fitting reveals that the attempt frequency reduced by one order of magnitude on Ce doping.