Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity

The effect of radiation defects on the field and temperature dependences of the magnetic susceptibility of single-crystal Si was studied. A nonlinear magnetic-field-dependence of the magnetic susceptibility of irradiated Si was observed. This behavior can be explained by magnetic ordering of A centers. It was concluded that clusters of these centers with a local density of the order of 1021 cm−3 exist. An explanation of the “diffusion paradox” in the formation of oxygen-containing thermal donors was proposed on the basis of micrononuniformities of the spatial distribution of thermal donors and interstitial oxygen in Si.