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Reduced HfO₂ Resistive Memory Variability by Inserting a Thin SnO₂ as Oxygen Stopping Layer
- Source :
- IEEE Electron Device Letters. 42:1778-1781
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- One of the major roadblocks for filamentary type resistive random access memory is variations in both the write voltage and the read resistance. The variation is inevitable because of the stochastic nature of oxygen ion movement inside the metal oxide. In this letter, we show that by inserting a thin SnO 2 layer within the HfO 2 switching layer, these variations can be significantly reduced. The TiN/HfO 2 /SnO 2 /HfO 2 /Pt material stack achieves ~ 10 times smaller standard deviation for the high resistance state( $>100\text{k}\Omega $ ) cycle to cycle distribution compared with the control group without the SnO 2 layer. The tight high resistance state distribution retained after 10 7 pulse cycling. Incremental RESET pulse measurement indicates that the thin SnO 2 acts as an oxygen stopping layer and thus explains the origin of reduced variability. The concept of an oxygen stopping layer is promising for reducing variability for resistive memory.
- Subjects :
- Materials science
business.industry
Oxide
chemistry.chemical_element
Oxygen
Electronic, Optical and Magnetic Materials
Resistive random-access memory
Metal
chemistry.chemical_compound
Stack (abstract data type)
chemistry
visual_art
visual_art.visual_art_medium
Optoelectronics
Electrical and Electronic Engineering
business
Tin
Layer (electronics)
Voltage
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........a5c416fd2064bd11b31e2838da647e5d