Back to Search
Start Over
Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
- Source :
- Materials Science Forum. :163-168
- Publication Year :
- 2005
- Publisher :
- Trans Tech Publications, Ltd., 2005.
-
Abstract
- The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.
- Subjects :
- Materials science
Fabrication
business.industry
Mechanical Engineering
Quantum wire
Context (language use)
Nanotechnology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Condensed Matter::Materials Science
Mechanics of Materials
Quantum dot laser
Quantum dot
Optoelectronics
General Materials Science
Nanorod
business
Quantum well
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........a5991193c1c891f4be18cfa8bccb1fd4