Cite
Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics
MLA
Liang Huinan, et al. “Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-Inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics.” IEEE Electron Device Letters, vol. 41, Jan. 2020, pp. 135–38. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........a598b1d29a8f9baced0ed2629d4e14e2&authtype=sso&custid=ns315887.
APA
Liang Huinan, Huolin Huang, Nan Sun, Gao Jun, Pengcheng Tao, Ren Yongshuo, Wang Ronghua, Zhonghao Sun, Shaoquan Li, Hongzhou Wang, Cheng Wanxi, & Song Shukuan. (2020). Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics. IEEE Electron Device Letters, 41, 135–138.
Chicago
Liang Huinan, Huolin Huang, Nan Sun, Gao Jun, Pengcheng Tao, Ren Yongshuo, Wang Ronghua, et al. 2020. “Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-Inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics.” IEEE Electron Device Letters 41 (January): 135–38. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........a598b1d29a8f9baced0ed2629d4e14e2&authtype=sso&custid=ns315887.