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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
- Source :
- Nanoscience and Nanotechnology Letters. 10:185-189
- Publication Year :
- 2018
- Publisher :
- American Scientific Publishers, 2018.
- Subjects :
- Delta
Materials science
business.industry
010401 analytical chemistry
Doping
Transistor
Algan gan
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Buffer (optical fiber)
0104 chemical sciences
law.invention
law
Optoelectronics
General Materials Science
0210 nano-technology
business
High electron
Leakage (electronics)
Subjects
Details
- ISSN :
- 19414900
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Nanoscience and Nanotechnology Letters
- Accession number :
- edsair.doi...........a50cb5f2c6438bce81196c9ed751194a