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Exchange bias and spin–orbit torque in the Fe3GeTe2-based heterostructures prepared by vacuum exfoliation approach

Authors :
Jian Tang
Haifeng Du
Jiafeng Feng
Jing Dong
Caihua Wan
Guoqiang Yu
Congli He
Xiufeng Han
Xiao Wang
Jialiang Jiang
Chenyang Guo
Guangyu Zhang
T. Y. Ma
Hongjun Xu
Hongxiang Wei
Changjiang Yi
Mingkun Zhao
Youguo Shi
Yu Zhang
Yuan Huang
Source :
Applied Physics Letters. 118:262406
Publication Year :
2021
Publisher :
AIP Publishing, 2021.

Abstract

Magnetic two-dimensional (2D) van der Waals (vdWs) materials are receiving increased attention due to their exceptional properties and potential applications in spintronic devices. Because exchange bias and spin–orbit torque (SOT)-driven magnetization switching are basic ingredients for spintronic devices, it is of pivotal importance to demonstrate these effects in the 2D vdWs material-based magnetic heterostructures. In this work, we employ a vacuum exfoliation approach to fabricate Fe3GeTe2 (FGT)/Ir22Mn78 (IrMn) and FGT/Pt bilayers, which have high-quality interfaces. An out-of-plane exchange bias of up to 895 Oe is obtained in the former bilayer, which is larger than that of the previously studied bilayers. In the latter bilayer, the SOT switching of the perpendicularly magnetized FGT is realized, which exhibits higher SOT-driven switching performance compared to the previously studied FGT/Pt bilayer devices with interfacial oxidation. The minimum of SOT efficiency is further determined to be 0.18 ± 0.04, comparable to the previously reported values for the Pt/Co and Pt/CoFeB bilayers. This work highlights the importance of the high-quality interface for the exchange bias and SOT effect and may pave the way for implementing 2D vdWs in spintronic devices.

Details

ISSN :
10773118 and 00036951
Volume :
118
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........a504725ffb2882ff04ecee618ec03254
Full Text :
https://doi.org/10.1063/5.0050483