Dislocation gettering in semi‐insulating GaAs investigated by cathodoluminescence

The cathodoluminescence (CL) imaging technique is applied to the characterization of semi‐insulating GaAs substrates after an extrinsic gettering treatment. A reverse contrast CL image is found for the gettered material. This study provides evidence for the physical mechanism taking place in the gettering process and contributes to the understanding of the effect of dislocations on device performance.