Cite
An Analytical Hot-Carrier Induced Degradation Model in Polysilicon TFTs
MLA
N. A. Hastas, et al. “An Analytical Hot-Carrier Induced Degradation Model in Polysilicon TFTs.” IEEE Transactions on Electron Devices, vol. 52, Oct. 2005, pp. 2182–87. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........a4cf34b0f7d85fd20748b11c6216d3c0&authtype=sso&custid=ns315887.
APA
N. A. Hastas, D. H. Tassis, G. Kamarinos, Alkis A. Hatzopoulos, & Charalabos A. Dimitriadis. (2005). An Analytical Hot-Carrier Induced Degradation Model in Polysilicon TFTs. IEEE Transactions on Electron Devices, 52, 2182–2187.
Chicago
N. A. Hastas, D. H. Tassis, G. Kamarinos, Alkis A. Hatzopoulos, and Charalabos A. Dimitriadis. 2005. “An Analytical Hot-Carrier Induced Degradation Model in Polysilicon TFTs.” IEEE Transactions on Electron Devices 52 (October): 2182–87. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........a4cf34b0f7d85fd20748b11c6216d3c0&authtype=sso&custid=ns315887.