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Design of a Simple Readout Circuit for Resistive Switching Memristors Based on CMOS Inverters

Authors :
Federico Golmar
F. Di Francesco
M. Garcia-Inza
N. Caroli
G. A. Sanca
Source :
RTSI
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

In this paper a CMOS reading circuit for memristor-based RRAM (Resistive Random Access Memory) cell is described. Simulations for one cell, 4 by 4 nMOS-accessed-array and extension to N by N nMOS-accessed-array are presented. The proposed circuit is based on CMOS inverters, which result in a simple low area architecture and in a non-destructive operation. Resistive switching memristor is used as reading reference. Simulations were performed in $0.5\ \mu \text{m}$ and 180 nm CMOS technology and using memristor model available in bibliography.

Details

Database :
OpenAIRE
Journal :
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI)
Accession number :
edsair.doi...........a4a0f9ccb04597118be373043f91d5a8
Full Text :
https://doi.org/10.1109/rtsi.2018.8548456