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Design of a Simple Readout Circuit for Resistive Switching Memristors Based on CMOS Inverters
- Source :
- RTSI
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- In this paper a CMOS reading circuit for memristor-based RRAM (Resistive Random Access Memory) cell is described. Simulations for one cell, 4 by 4 nMOS-accessed-array and extension to N by N nMOS-accessed-array are presented. The proposed circuit is based on CMOS inverters, which result in a simple low area architecture and in a non-destructive operation. Resistive switching memristor is used as reading reference. Simulations were performed in $0.5\ \mu \text{m}$ and 180 nm CMOS technology and using memristor model available in bibliography.
Details
- Database :
- OpenAIRE
- Journal :
- 2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI)
- Accession number :
- edsair.doi...........a4a0f9ccb04597118be373043f91d5a8
- Full Text :
- https://doi.org/10.1109/rtsi.2018.8548456