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Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
- Source :
- Applied Physics Letters. 95:011911
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band.
- Subjects :
- Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
Condensed matter physics
business.industry
Doping
Fermi level
chemistry.chemical_element
Germanium
Electron
Epitaxy
Condensed Matter::Materials Science
symbols.namesake
chemistry
Thermal
symbols
Optoelectronics
business
Excitation
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 95
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........a44251f16cd2fc4fe371accf04622fec