Characteristics of MOSFET's fabricated on laser-recrystallized Silicon islands on amorphous substrates using selective absorption and beam shaping techniques

The characteristics of MOSFET's fabricated in laser-recrystallized silicon islands on amorphous substrates using a standard n-channel poly-gate process were studied. Selective absorption using patterned dielectric films and beam shaping were used as means for improving the recrystallization of LPCVD polysilicon islands on fused quartz. IR imaging of the molten region was used to optimize and control the recrystallization. Devices with various channel lengths and widths were fabricated and the dependence of threshold voltage, channel mobility, and leakage on recrystallization conditions were studied.