Electrical and optical characterization of thermally deposited indium-tin-oxide film on high efficiency single-junction GaAs solar cell

Authors :: Jheng-Jie Liu
Wen-Jeng Ho
Hung-Pin Shiao
Wen-Bin Bai
Jian-Cheng Lin
Source :: 2017 International Conference on Applied System Innovation (ICASI).
Publication Year :: 2017
Publisher :: IEEE, 2017.
Abstract: The thermally deposited indium-tin-oxide (ITO) film on single-junction GaAs solar-cell as an excellent antireflection, passivation and window layer to achieve higher efficiency is demonstrated. The passivated characteristic of the ITO-film on GaAs solar-cell is examined by saturation-current and ideality factor. The antireflection of the ITO-film on GaAs solar-cell is revealed by optical-reflectance and external quantum-efficiency. The efficiency of 23.52% for the GaAs cell with ITO antireflection-coating (ARC) was higher than that of 21.92% for the GaAs cell with SiO 2 ARC.

Database :: OpenAIRE
Journal :: 2017 International Conference on Applied System Innovation (ICASI)
Accession number :: edsair.doi...........a3f0a05474fb0f363c6530c77e361af9
Full Text :: https://doi.org/10.1109/icasi.2017.7988294

Full Text Access

Tools