Thermal Stability Improvement via Cyclic D[sub 2]O Radical Anneal Interposed in Atomic Layer Deposition Process

Cyclic D 2 O radical anneal was interposed in atomic layer deposition (ALD) of HfO 2 gate dielectrics on Si. A significant improvement on the thermal stability of the gate dielectrics against postdeposition anneal (PDA) can be achieved from the incorporation of this special anneal technique into the ALD process. A low equivalent oxide thickness of the HfO 2 gate dielectrics was retained even after 900°C PDA.