Advanced millimeter-wave InP HEMT MMICs

InP-based high electron mobility transistors (HEMTs) developed have exhibited state-of-the-art low noise and power performance well up to W-band frequencies. High performance V- and W-band monolithic amplifiers based on these devices have also been developed. A full W-band InP three-stage monolithic microwave integrated circuit (MMIC) amplifier yields a measured noise matching and bias decoupling networks. A thorough design and analysis procedure was incorporated, including accurate characterization of the devices and circuit elements at W-band frequencies. The first pass success of these full band MMIC amplifiers indicates the importance of accurate device characterization and thorough circuit designs in millimeter wave monolithic IC development. >