Growth of SiGe Layer on Si(100) Substrate Using Disilane Gas and Thermally Evaporated Ge in Gas-Source MBE

Authors :: Kinam Kim
Kang L. Wang
Rajat Jhanjee
Jeoung Ju Lee
Source :: Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Publication Year :: 1993
Publisher :: The Japan Society of Applied Physics, 1993.

Subjects :: chemistry.chemical_compound
Materials science
chemistry
Chemical engineering
Nanotechnology
Disilane
Substrate (printing)
Layer (electronics)

Database :: OpenAIRE
Journal :: Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........a3da20dbc3d9aa1b23b5de79a82ccfc6

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