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Electronic structure of magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2
- Source :
- Russian Journal of Inorganic Chemistry. 52:1243-1247
- Publication Year :
- 2007
- Publisher :
- Pleiades Publishing Ltd, 2007.
-
Abstract
- The band structures of pure semiconductors CdGeAs2 and CuGaTe2, as well as magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2 (x = 0.0625), have been calculated by the density functional theory method. In both compounds, the Mn3d orbitals form a narrow band near the Fermi level. In the case of Cd1 − x Mn x GeAs2, the Mn3d orbitals are slightly involved in chemical bonding. In the case of Cu1 − x Mn x GaTe2, the same orbitals are considerably involved in chemical bonding. The relationship of these results with the properties of the compounds and ferromagnetism models is discussed.
- Subjects :
- Condensed matter physics
Chemistry
business.industry
Materials Science (miscellaneous)
Fermi level
Magnetic semiconductor
Electronic structure
Inorganic Chemistry
symbols.namesake
Semiconductor
Ferromagnetism
Chemical bond
Atomic orbital
symbols
Density functional theory
Physical and Theoretical Chemistry
business
Subjects
Details
- ISSN :
- 15318613 and 00360236
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Russian Journal of Inorganic Chemistry
- Accession number :
- edsair.doi...........a2cc33e9eb9d8f01a1e7285c6ed1e3c6