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Electronic structure of magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2

Authors :
S. V. Murashov
V. I. Nefedov
V. G. Yarzhemsky
E. N. Murav’ev
Source :
Russian Journal of Inorganic Chemistry. 52:1243-1247
Publication Year :
2007
Publisher :
Pleiades Publishing Ltd, 2007.

Abstract

The band structures of pure semiconductors CdGeAs2 and CuGaTe2, as well as magnetic semiconductors Cd1 − x Mn x GeAs2 and Cu1 − x Mn x GaTe2 (x = 0.0625), have been calculated by the density functional theory method. In both compounds, the Mn3d orbitals form a narrow band near the Fermi level. In the case of Cd1 − x Mn x GeAs2, the Mn3d orbitals are slightly involved in chemical bonding. In the case of Cu1 − x Mn x GaTe2, the same orbitals are considerably involved in chemical bonding. The relationship of these results with the properties of the compounds and ferromagnetism models is discussed.

Details

ISSN :
15318613 and 00360236
Volume :
52
Database :
OpenAIRE
Journal :
Russian Journal of Inorganic Chemistry
Accession number :
edsair.doi...........a2cc33e9eb9d8f01a1e7285c6ed1e3c6