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High-efficiency quantum-dot light-emitting devices with enhanced charge injection
- Source :
- Nature Photonics. 7:407-412
- Publication Year :
- 2013
- Publisher :
- Springer Science and Business Media LLC, 2013.
-
Abstract
- Red quantum-dot light-emitting diodes with an external quantum efficiency of 18%, close to the theoretical maximum of 20%, are reported. Using a layer of zinc oxide nanocrystals provides highly effective electron transport, resulting in devices with a low operating voltage and a high luminous power efficiency of 25 lm W−1.
- Subjects :
- Materials science
business.industry
chemistry.chemical_element
Zinc
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Laser
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Luminous flux
Condensed Matter::Materials Science
Nanocrystal
chemistry
law
Quantum dot
Optoelectronics
Quantum efficiency
business
Layer (electronics)
Diode
Subjects
Details
- ISSN :
- 17494893 and 17494885
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- Nature Photonics
- Accession number :
- edsair.doi...........a2bc4e4c21bbb1d82d9666978ebcfc60