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Effect of Substrates on the Characteristics of Silicon Carbide Deposited from Methyltrichlorosilane
- Source :
- Advanced Materials Research. :1422-1427
- Publication Year :
- 2011
- Publisher :
- Trans Tech Publications, Ltd., 2011.
-
Abstract
- SiC is fabricated by chemical vapor deposition (CVD) on graphite and Si3N4ceramic respectively. The morphology, composition, grain size and electrical conductivity of SiC deposited on graphite (CVD-SiC(C)) and on Si3N4ceramic (CVD-SiC(N)) are investigated and compared. The morphology of CVD-SiC(C)and CVD-SiC(N)is much different with each other. The grain size of CVD-SiC(C)is bigger than that of CVD-SiC(N). It is nearly stoichiometric in CVD-SiC(C), while carbon-rich in CVD-SiC(N), so the electrical conductivity and dielectric loss of CVD-SiC(N)are much higher than that of CVD-SiC(C). As the annealing temperature increases, the grain size and electrical conductivity of CVD-SiC(C)and CVD-SiC(N)both increase.
- Subjects :
- Materials science
Annealing (metallurgy)
Metallurgy
General Engineering
Analytical chemistry
Chemical vapor deposition
Grain size
Methyltrichlorosilane
chemistry.chemical_compound
chemistry
Electrical resistivity and conductivity
visual_art
visual_art.visual_art_medium
Silicon carbide
Graphite
Ceramic
Subjects
Details
- ISSN :
- 16628985
- Database :
- OpenAIRE
- Journal :
- Advanced Materials Research
- Accession number :
- edsair.doi...........a2aeea4e80b00aa95b4319007baca1c8