320 × 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice

320 × 256 mid-infrared focal plane arrays, together with linear arrays and single element devices, were fabricated based on type-II InAs/GaSb superlattice. At 77 K, the diode shows 50% cut-off wavelength of 4.8 μm and peak quantum efficiency of 38% at 3.7 μm without any bias dependence. The dominant dark current mechanisms at different temperatures are identified by R0A analysis. At 160 K, R0A of 2.2 × 103 Ω cm2 and specific detectivity of 1.8 × 1011 cm Hz0.5/W are demonstrated. Infrared imaging with an integration time of 5 ms demonstrates noise equivalent temperature difference of 12.3 mK and 34.2 mK, separately at 90 K and 120 K.