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Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

Authors :
Luping Shi
Yat Li
James A. Bain
Rong Zhao
Chun Chia Tan
Yi Yang
Tow Chong Chong
Tuviah E. Schlesinger
Qiang Guo
Jonathan A. Malen
Wee-Liat Ong
Source :
Applied Physics Letters. 103:133507
Publication Year :
2013
Publisher :
AIP Publishing, 2013.

Abstract

A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated ∼37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of ∼108 compared to ∼106 for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements.

Details

ISSN :
10773118 and 00036951
Volume :
103
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........a27b168957bd7a3efdf3b15919d587d7