A random number generator based on insulator-to-metal electronic phase transitions

Random number generators (RNG) are a fundamental hardware component in modern cryptographic systems [1]. The generation of random numbers can be subdivided into two classes, pseudo-RNGs and hardware RNGs. In pseudo-RNGs software algorithms are implemented on deterministic hardware but are dependent on a set of initial values or “seed”, which reduces the security. In contrast, hardware RNGs generate random numbers from a naturally occurring physical phenomenon, such as thermal noise. However, implementations often suffer from large silicon footprints due to the need to create resistor-amplifier-ADC chains [2] or bias removal circuits [3]. In this work, we experimentally demonstrate a compact and scalable 1T1R based RNG by harnessing the inherent stochasticity in the insulator-to-metal phase transition (IMT) in vanadium dioxide (VO 2 ).