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43- and 50-Mp High-Performance Interline CCD Image Sensors

Authors :
Eric G. Stevens
Ryan Kather
Joseph Summa
Peter Mersich
John McCarten
James E. Doran
Douglas A. Carpenter
Shen Wang
Eric J. Meisenzahl
Robert P. Fabinski
Tom Frank
Stephen L. Kosman
Brian Tobey
Cristian Tivarus
Richard Brolly
Alden Lum
Adam DeJager
Source :
IEEE Transactions on Electron Devices. 66:1329-1337
Publication Year :
2019
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2019.

Abstract

This paper describes the design and performance of two new high-resolution interline charge-coupled device image sensors for use in industrial, machine vision, and aerial photography applications. These sensors feature 4.5- $\mu \text{m}$ pixels, 4 outputs, fast dump gate, horizontal lateral overflow drain, and vertical electronic shutter. The 43-Mp sensor has a 35-mm optical format and the 50-Mp sensor has a larger format with a 2.175:1 aspect ratio that matches many modern mobile phone displays. This paper discusses the challenges and solutions to manufacture such large sensors with superior image quality such as uniformity, read noise, dark current, smear, transfer gate blooming, lag, and so on.

Details

ISSN :
15579646 and 00189383
Volume :
66
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........a228160e43b4294c89fdcf891d32f4e2
Full Text :
https://doi.org/10.1109/ted.2019.2891414