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Femtosecond laser ablation of materials

Femtosecond laser ablation of materials

Authors :
A. Semerok
G. Dumitru
Wladimir Marine
Marc Sentis
Heinz P. Weber
Valerio Romano
Joerg Hermann
S. Bruneau
Source :
SPIE Proceedings.
Publication Year :
2003
Publisher :
SPIE, 2003.

Abstract

Polycrystalline SiGe is attracting more and more attention in micro and optoelectronics devices both at industrial and university level. Research on both devices and material growth techniques continues at a very rapid pace in the scientific world. Low cost production techniques, capable to produce such alloys with uniform and controlled grain size, becomes of particular attention. Excimer laser crystallization has proved to be a valuable how thermal budget technique for amorphous silicon crystallization. Its main advantages are the high process quality and reproducibility joint to the possibility of tailoring the grain sizes both in small selected regions and in large areas. This technique is here applied for producing poly-SiGe alloys from amorphous SiGe films deposited on glass.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Details

ISSN :
0277786X
Database :
OpenAIRE
Journal :
SPIE Proceedings
Accession number :
edsair.doi...........a1e187c13b57dd39d7bae6b01d2b6f89
Full Text :
https://doi.org/10.1117/12.537580