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Femtosecond laser ablation of materials
Femtosecond laser ablation of materials
- Source :
- SPIE Proceedings.
- Publication Year :
- 2003
- Publisher :
- SPIE, 2003.
-
Abstract
- Polycrystalline SiGe is attracting more and more attention in micro and optoelectronics devices both at industrial and university level. Research on both devices and material growth techniques continues at a very rapid pace in the scientific world. Low cost production techniques, capable to produce such alloys with uniform and controlled grain size, becomes of particular attention. Excimer laser crystallization has proved to be a valuable how thermal budget technique for amorphous silicon crystallization. Its main advantages are the high process quality and reproducibility joint to the possibility of tailoring the grain sizes both in small selected regions and in large areas. This technique is here applied for producing poly-SiGe alloys from amorphous SiGe films deposited on glass.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Details
- ISSN :
- 0277786X
- Database :
- OpenAIRE
- Journal :
- SPIE Proceedings
- Accession number :
- edsair.doi...........a1e187c13b57dd39d7bae6b01d2b6f89
- Full Text :
- https://doi.org/10.1117/12.537580