Temperature and growth rate fluctuations in silicon floating zones

Several earlier μg experiments have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed on the TEXUS36 flight (February 7, 1998) in a monoellipsoid mirror furnace to measure temperature fluctuations in the melt zone and the microscopic growth rate simultaneously. Fluctuations of 0.5K – 0.7K with main frequencies between 0.1Hz and 0.3Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies f ≤ 0.25Hz and amplitudes up to 1.8K at a position equivalent to that of the sensor tip in the experiment. Future microgravity S-FZ experiments, currently scheduled for a MAXUS flight in 2001, will try to influence the formation of dopant striations by rotating magnetic fields or by vibrational convection.