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Resonantly excited photoluminescence in porous silicon
Resonantly excited photoluminescence in porous silicon
- Source :
- Thin Solid Films. 255:250-253
- Publication Year :
- 1995
- Publisher :
- Elsevier BV, 1995.
-
Abstract
- We report on the photoluminescence (PL) spectra of porous silicon excited resonantly by laser lines within the luminescence band. Measurements have been performed for different excitation energies, temperatures and delay times. At low temperatures, the known step-like phonon structure in the PL spectra of porous silicon and a gap of the few millielectronvolts between the laser line and the onset of the luminescence are observed. As the temperature is increased, the onsets of both the PL spectra and the step features shift towards higher energies whereas the peak of the spectrum moves towards lower energies by an amount which depends on the delay time after excitation. Furthermore, the gap disappears and simultaneously an exponential tail of the spectrum occurs on the high energy side of the laser line, which broadens proportionally to kT . These results are discussed in light of the existing theories for the luminescence mechanism in porous silicon and for the origin of the step features in the PL spectra.
- Subjects :
- Materials science
Photoluminescence
Silicon
Phonon
business.industry
Metals and Alloys
chemistry.chemical_element
Surfaces and Interfaces
Laser
Porous silicon
Molecular physics
Spectral line
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Optics
chemistry
law
Excited state
Materials Chemistry
Luminescence
business
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 255
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........a1c35922124397e93a95e86e396c84ed
- Full Text :
- https://doi.org/10.1016/0040-6090(94)05665-z