Formation of periodic structures during excimer laser‐assisted heteroepitaxy of GaP

Periodic structures have been obtained during nominally unpolarized excimer laser (ArF)‐assisted organometallic vapor phase epitaxy of GaP on GaAs. Both crystalline properties and chemical composition of these structures have been examined. The chemical analysis showed a variation in composition across a ripple which was attributed to the modulated thermal profile due to interference.