Crack-free PZT thin films micropatterned on silicon substrate for integrated circuits

Process for getting crack-free lead zirconate titanate (PZT) thin films micropatterned on Si substrate is demonstrated. The PZT film was deposited at temperatures below 300°C by magnetron sputtering using a ceramic target, and then etched before annealing. After annealed above 500°C to get perovskite phase, the PZT films shows no crack, while PZT films, not patterned, has cracks. This result can be explained as dissipation of stress energy by reduction of the lateral size of the film. The effects of processing parameters of reactive sputtering and annealing on the morphology of the PZT thin films are presented. Photo-assist etching of the PZT thin films using KrF laser is described, too.