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High-Performance Metal-Induced Laterally Crystallized Polycrystalline Silicon P-Channel Thin-Film Transistor With $\hbox{TaN/HfO}_{2}$ Gate Stack Structure
- Source :
- IEEE Electron Device Letters. 29:592-594
- Publication Year :
- 2008
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2008.
-
Abstract
- In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ~ 0.095 V, excellent subthreshold swing S.S. ~83 mV/dec, and high field-effect mobility muFE ~ 240 cm2/V ldr s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO2 gate dielectric with the effective oxide thickness of 5.12 nm.
- Subjects :
- Materials science
Passivation
business.industry
Gate dielectric
Transistor
Electrical engineering
engineering.material
Electronic, Optical and Magnetic Materials
law.invention
Threshold voltage
Polycrystalline silicon
law
Thin-film transistor
engineering
Optoelectronics
Electrical and Electronic Engineering
business
Metal gate
High-κ dielectric
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........a0f73a832688bc97ec0504b9697af6f5