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New measurement technique of pore size distribution of porous low-k film
- Source :
- Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
- Publication Year :
- 2001
- Publisher :
- IEEE, 2001.
-
Abstract
- We developed a new simple X-ray scattering method for determining the pore size distribution in porous low-k film on silicon substrate without the destruction of the low-k film. We succeeded to observe the tungsten in porous MSQ (Methyl Silses Quioxane) film by TEM after the filling of tungsten into the pores by tungsten chemical vapor deposition (CVD). Furthermore, we compared this Small Angle X-ray Scattering (SAXS) and Gas Adsorption (GA) and Positron Annihilation Lifetime Spectroscopy (PALS).
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461)
- Accession number :
- edsair.doi...........a0e2e4f4adf9f53ff56021e36d1ac906