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Study on the Effects of Si Implantation on the Interface of 4H-SiC MOSFET

Authors :
J.-Y. Jiang
J.-Q. Hung
P.-W. Huang
T.-L. Wu
C.-F. Huang
Source :
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Publication Year :
2019
Publisher :
The Japan Society of Applied Physics, 2019.

Subjects

Subjects :
Materials science
Interface (Java)
business.industry
MOSFET
Optoelectronics
business

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........a04cb16dc12ccc112a2075c422f80bdf
Full Text :
https://doi.org/10.7567/ssdm.2019.ps-4-09
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