Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region

Fairly low threshold current operation was achieved with Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained (TS) single-quantum-well (SQW) lasers with 30- approximately 40-nm-wide and 70-nm-period wire active region fabricated by a combination of a wet chemical etching and two-step OMVPE (organometallic vapor phase epitaxy) growth. Threshold current as low as 16 mA and threshold current density of 816 A/cm/sup 2/ were obtained under a room temperature CW condition. In comparing the spontaneous emission peak wavelength of the TS-SQW wire laser with that of the TS-SQW film laser, an approximately 10-meV blue shift of the fundamental energy level was observed in the TS-SQW wire laser. >