Performance Analysis of PID Affected Crystalline Silicon PV Module under Partial Shading Condition

Potential-induced degradation (PID) significantly affects the performance of a photovoltaic (PV) module. In this paper, modeling and simulation of PID affected module are performed to unveil the insights of electrical losses and stresses resulting under partial shading conditions. PID is modeled using two diode model, taking into account the severity and nature (ohmic and non-ohmic) of PID shunting. Frequently observed shading patterns in a field are considered in the simulation. Results show that the predominantly ohmic nature of PID improves the module output under partial shading conditions, although it also leads to extreme reverse stresses across the shaded cell. In the case of non-ohmic PID, reverse stresses across the shaded cell are not much severe, leading to degradation in module power output. Perpendicular shading pattern to the cell string results in severe power loss, and with an increase in ohmic PID severity, reverse stresses across the shaded cells increase significantly. Failure of bypass diode leads to excess power loss and reverse stresses at shading percentage lower than critical shading.