Back to Search Start Over

Incorporation of Alloy Fluctuation Effects for Accurate Modeling of GaN/InGaN/GaN Light Emitting Diodes

Authors :
Sheikh Ifatur Rahman
Zane Jamal-Eddine
Zhanbo Xia
Rob Armitage
Siddharth Rajan
Source :
Lester Eastmann Conference at University of Notre Dame.
Publication Year :
2021
Publisher :
US DOE, 2021.

Details

Database :
OpenAIRE
Journal :
Lester Eastmann Conference at University of Notre Dame
Accession number :
edsair.doi...........a02d968fbbadcfaa2b3617bbc00b81f3

Tools

Authors Abstract Subjects Details