Impact of EBAS annealing on sheet resistance reduction for Al-implanted 4H-SiC(0001)

In this paper, we demonstrate that high temperature and short time EBAS annealing is effective to obtain low sheet resistance without surface roughening in heavily Al-implanted 4H-SiC (0001) samples (Al concentration: 1.0 × 1021 /cm3, thickness: 0.3 microns, total dose: 2.6 × 1016 /cm2). The sheet resistance and rms surface roughness of the sample annealed at 1800 °C for 0.5 min is estimated to be 4.8k ohm/sq. and 0.82 nm, respectively. Also, we discuss the advantage of EBAS annealing for the suppression of surface roughening during annealing.